DRAM
The volatile working memory that HBM is built from
DRAM is the foundational volatile memory technology; HBM is a specialized 3D-stacked packaging of DRAM dies, so every HBM stack consumes leading-edge DRAM wafer capacity. The AI boom has diverted DRAM capacity into high-margin HBM, tightening supply and lifting prices for conventional DDR5/LPDDR/GDDR used in CPUs, servers, and GPUs. Advanced DRAM nodes (1-alpha/1-beta/1-gamma, moving toward EUV patterning) are made by SK Hynix, Samsung, and Micron.
Relation to HBM
HBM = 3D-stacked DRAM dies
Makers
SK Hynix, Samsung, Micron
AI effect
Capacity diverted to HBM tightens DDR5/GDDR
Leading nodes
1-gamma; EUV adoption in DRAM
How it fits the stack
DRAM with what it depends on (above) and what it feeds (below). The figure renders as a crawlable diagram and upgrades to an interactive 3D graph as it scrolls into view.
DRAM in the AI stack. DRAM with its immediate upstream dependencies (top) and downstream dependents (bottom) in the AI value chain. Hover a node in 3D, or read the full relationships below.
Graph data (text) — 6 entities, 5 relationships
- DRAM —manufactures→ Micron Technology
- DRAM —manufactures→ Samsung Electronics (Memory)
- DRAM —depends on→ Silicon Wafers
- DRAM —manufactures→ SK Hynix
- High-Bandwidth Memory (HBM) —uses→ DRAM
Depends on ↑ · 4