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L3 · FabsFoundryHwaseong, South Korea005930.KS

Samsung Foundry

No. 2 leading-edge foundry, first to GAA at 3nm

Samsung Foundry is the primary structural competitor to TSMC at the leading edge and was first to ship gate-all-around (GAA/MBCFET) transistors at its 3nm node. It struggles with yield and customer trust relative to TSMC, but retains strategic importance as the only alternative leading-edge source outside Taiwan and it fabricates its own Exynos and some AI silicon. Its Taylor, Texas fab (delayed into 2026) targets 2nm-class production and won a Tesla AI6 chip deal in 2025.

Leading node

SF3 (3nm GAA); SF2 (2nm) ramping

Taylor, TX fab

~$37B, production slipped to 2026

2025 win

Tesla AI6 inference chip (~$16.5B)

How it fits the stack

Samsung Foundry with what it depends on (above) and what it feeds (below). The figure renders as a crawlable diagram and upgrades to an interactive 3D graph as it scrolls into view.

suppliessuppliesdepends onsuppliesusessuppliessuppliesdepends onpartners withinvests inSamsung FoundryFabsApplied MaterialsASM InternationalchokepointASML HoldingchokepointEUV Lithography(13.5nm)chokepointKLA CorporationLam ResearchTenstorrentSamsung Electronics(Memory)CHIPS and Science Act
Samsung FoundryDepends on ↑Feeds ↓Related

Samsung Foundry in the AI stack. Samsung Foundry with its immediate upstream dependencies (top) and downstream dependents (bottom) in the AI value chain. Hover a node in 3D, or read the full relationships below.

Graph data (text) — 10 entities, 10 relationships
  • Samsung FoundrysuppliesApplied Materials
  • Samsung FoundrysuppliesASM International
  • Samsung Foundrydepends onASML Holding
  • Samsung FoundrysuppliesASML Holding
  • Samsung FoundryusesEUV Lithography (13.5nm)
  • Samsung FoundrysuppliesKLA Corporation
  • Samsung FoundrysuppliesLam Research
  • Tenstorrentdepends onSamsung Foundry
  • Samsung Foundrypartners withSamsung Electronics (Memory)
  • Samsung Foundryinvests inCHIPS and Science Act